Daily Papers

Point defects play a central role in driving the properties of materials. First-principles methods are widely used to compute defect energetics and structures, including at scale for high-throughput defect databases. However, these methods are computationally expensive, making machine-learning force fields (MLFFs) an attractive alternative for accelerating structural relaxations. Most existing MLFFs are based on graph neural networks (GNNs), which can suffer from oversmoothing and poor representation of long-range interactions. Both of these issues are especially of concern when modeling point defects. To address these challenges, we introduce the Accelerated Deep Atomic Potential Transformer (ADAPT), an MLFF that replaces graph representations with a direct coordinates-in-space formulation and explicitly considers all pairwise atomic interactions. Atoms are treated as tokens, with a Transformer encoder modeling their interactions. Applied to a dataset of silicon point defects, ADAPT achieves a roughly 33 percent reduction in both force and energy prediction errors relative to a state-of-the-art GNN-based model, while requiring only a fraction of the computational cost.

In this study, we applied the PointRend (Point-based Rendering) method to semiconductor defect segmentation. PointRend is an iterative segmentation algorithm inspired by image rendering in computer graphics, a new image segmentation method that can generate high-resolution segmentation masks. It can also be flexibly integrated into common instance segmentation meta-architecture such as Mask-RCNN and semantic meta-architecture such as FCN. We implemented a model, termed as SEMI-PointRend, to generate precise segmentation masks by applying the PointRend neural network module. In this paper, we focus on comparing the defect segmentation predictions of SEMI-PointRend and Mask-RCNN for various defect types (line-collapse, single bridge, thin bridge, multi bridge non-horizontal). We show that SEMI-PointRend can outperforms Mask R-CNN by up to 18.8% in terms of segmentation mean average precision.

The presence of point defects such as vacancies plays an important role in material design. Here, we demonstrate that a graph neural network (GNN) model trained only on perfect materials can also be used to predict vacancy formation energies (E_{vac}) of defect structures without the need for additional training data. Such GNN-based predictions are considerably faster than density functional theory (DFT) calculations with reasonable accuracy and show the potential that GNNs are able to capture a functional form for energy predictions. To test this strategy, we developed a DFT dataset of 508 E_{vac} consisting of 3D elemental solids, alloys, oxides, nitrides, and 2D monolayer materials. We analyzed and discussed the applicability of such direct and fast predictions. We applied the model to predict 192494 E_{vac} for 55723 materials in the JARVIS-DFT database.

Shrinking pattern dimensions leads to an increased variety of defect types in semiconductor devices. This has spurred innovation in patterning approaches such as Directed self-assembly (DSA) for which no traditional, automatic defect inspection software exists. Machine Learning-based SEM image analysis has become an increasingly popular research topic for defect inspection with supervised ML models often showing the best performance. However, little research has been done on obtaining a dataset with high-quality labels for these supervised models. In this work, we propose a method for obtaining coherent and complete labels for a dataset of hexagonal contact hole DSA patterns while requiring minimal quality control effort from a DSA expert. We show that YOLOv8, a state-of-the-art neural network, achieves defect detection precisions of more than 0.9 mAP on our final dataset which best reflects DSA expert defect labeling expectations. We discuss the strengths and limitations of our proposed labeling approach and suggest directions for future work in data-centric ML-based defect inspection.

As the globalization of semiconductor design and manufacturing processes continues, the demand for defect detection during integrated circuit fabrication stages is becoming increasingly critical, playing a significant role in enhancing the yield of semiconductor products. Traditional wafer map defect pattern detection methods involve manual inspection using electron microscopes to collect sample images, which are then assessed by experts for defects. This approach is labor-intensive and inefficient. Consequently, there is a pressing need to develop a model capable of automatically detecting defects as an alternative to manual operations. In this paper, we propose a method that initially employs a pre-trained VAE model to obtain the fault distribution information of the wafer map. This information serves as guidance, combined with the original image set for semi-supervised model training. During the semi-supervised training, we utilize a teacher-student network for iterative learning. The model presented in this paper is validated on the benchmark dataset WM-811K wafer dataset. The experimental results demonstrate superior classification accuracy and detection performance compared to state-of-the-art models, fulfilling the requirements for industrial applications. Compared to the original architecture, we have achieved significant performance improvement.

The chips contained in any electronic device are manufactured over circular silicon wafers, which are monitored by inspection machines at different production stages. Inspection machines detect and locate any defect within the wafer and return a Wafer Defect Map (WDM), i.e., a list of the coordinates where defects lie, which can be considered a huge, sparse, and binary image. In normal conditions, wafers exhibit a small number of randomly distributed defects, while defects grouped in specific patterns might indicate known or novel categories of failures in the production line. Needless to say, a primary concern of semiconductor industries is to identify these patterns and intervene as soon as possible to restore normal production conditions. Here we address WDM monitoring as an open-set recognition problem to accurately classify WDM in known categories and promptly detect novel patterns. In particular, we propose a comprehensive pipeline for wafer monitoring based on a Submanifold Sparse Convolutional Network, a deep architecture designed to process sparse data at an arbitrary resolution, which is trained on the known classes. To detect novelties, we define an outlier detector based on a Gaussian Mixture Model fitted on the latent representation of the classifier. Our experiments on a real dataset of WDMs show that directly processing full-resolution WDMs by Submanifold Sparse Convolutions yields superior classification performance on known classes than traditional Convolutional Neural Networks, which require a preliminary binning to reduce the size of the binary images representing WDMs. Moreover, our solution outperforms state-of-the-art open-set recognition solutions in detecting novelties.

Manufacturing wafers is an intricate task involving thousands of steps. Defect Pattern Recognition (DPR) of wafer maps is crucial for determining the root cause of production defects, which may further provide insight for yield improvement in wafer foundry. During manufacturing, various defects may appear standalone in the wafer or may appear as different combinations. Identifying multiple defects in a wafer is generally harder compared to identifying a single defect. Recently, deep learning methods have gained significant traction in mixed-type DPR. However, the complexity of defects requires complex and large models making them very difficult to operate on low-memory embedded devices typically used in fabrication labs. Another common issue is the unavailability of labeled data to train complex networks. In this work, we propose an unsupervised training routine to distill the knowledge of complex pre-trained models to lightweight deployment-ready models. We empirically show that this type of training compresses the model without sacrificing accuracy despite being up to 10 times smaller than the teacher model. The compressed model also manages to outperform contemporary state-of-the-art models.

This survey paper offers a comprehensive review of methodologies utilizing machine learning (ML) classification techniques for identifying wafer defects in semiconductor manufacturing. Despite the growing body of research demonstrating the effectiveness of ML in wafer defect identification, there is a noticeable absence of comprehensive reviews on this subject. This survey attempts to fill this void by amalgamating available literature and providing an in-depth analysis of the advantages, limitations, and potential applications of various ML classification algorithms in the realm of wafer defect detection. An innovative taxonomy of methodologies that we present provides a detailed classification of algorithms into more refined categories and techniques. This taxonomy follows a three-tier structure, starting from broad methodology categories and ending with specific techniques. It aids researchers in comprehending the complex relationships between different algorithms and their techniques. We employ a rigorous empirical and experimental evaluation to rank these varying techniques. For the empirical evaluation, we assess techniques based on a set of five criteria. The experimental evaluation ranks the algorithms employing the same techniques, sub-categories, and categories. Also the paper illuminates the future prospects of ML classification techniques for wafer defect identification, underscoring potential advancements and opportunities for further research in this field

Understanding electron irradiation effects is vital not only for reliable transmission electron microscopy characterization, but increasingly also for the controlled manipulation of two-dimensional materials. The displacement cross sections of monolayer hBN are measured using aberration-corrected scanning transmission electron microscopy in near ultra-high vacuum at primary beam energies between 50 and 90 keV. Damage rates below 80 keV are up to three orders of magnitude lower than previously measured at edges under poorer residual vacuum conditions where chemical etching appears to have been dominant. Notably, is possible to create single vacancies in hBN using electron irradiation, with boron almost twice as likely as nitrogen to be ejected below 80 keV. Moreover, any damage at such low energies cannot be explained by elastic knock-on, even when accounting for vibrations of the atoms. A theoretical description is developed to account for lowering of the displacement threshold due to valence ionization resulting from inelastic scattering of probe electrons, modelled using charge-constrained density functional theory molecular dynamics. Although significant reductions are found depending on the constrained charge, quantitative predictions for realistic ionization states are currently not possible. Nonetheless, there is potential for defect-engineering of hBN at the level of single vacancies using electron irradiation.

Manufacturing wafers is an intricate task involving thousands of steps. Defect Pattern Recognition (DPR) of wafer maps is crucial to find the root cause of the issue and further improving the yield in the wafer foundry. Mixed-type DPR is much more complicated compared to single-type DPR due to varied spatial features, the uncertainty of defects, and the number of defects present. To accurately predict the number of defects as well as the types of defects, we propose a novel compact deformable convolutional transformer (DC Transformer). Specifically, DC Transformer focuses on the global features present in the wafer map by virtue of learnable deformable kernels and multi-head attention to the global features. The proposed method succinctly models the internal relationship between the wafer maps and the defects. DC Transformer is evaluated on a real dataset containing 38 defect patterns. Experimental results show that DC Transformer performs exceptionally well in recognizing both single and mixed-type defects. The proposed method outperforms the current state of the models by a considerable margin

Nanostructured Si is the most promising high-capacity anode material to substantially increase the energy density of Li-ion batteries. Among the remaining challenges is its low rate capability as compared to conventional materials. To understand better what controls the diffusion of Li in the amorphous Li-Si alloy, we use a novel machine-learning potential trained on more than 40,000 ab-initio calculations and nanosecond-scale molecular dynamics simulations, to visualize for the first time the delithiation of entire LiSi nanoparticles. Our results show that the Si host is not static but undergoes a dynamic rearrangement from isolated atoms, to chains, and clusters, with the Li diffusion strongly governed by this Si rearrangement. We find that the Li diffusivity is highest when Si segregates into clusters, so that Li diffusion proceeds via hopping between the Si clusters. The average size of Si clusters and the concentration range over which Si clustering occurs can thus function as design criteria for the development of rate-improved anodes based on modified Si.

Identifying defect patterns in a wafer map during manufacturing is crucial to find the root cause of the underlying issue and provides valuable insights on improving yield in the foundry. Currently used methods use deep neural networks to identify the defects. These methods are generally very huge and have significant inference time. They also require GPU support to efficiently operate. All these issues make these models not fit for on-line prediction in the manufacturing foundry. In this paper, we propose an extremely simple yet effective technique to extract features from wafer images. The proposed method is extremely fast, intuitive, and non-parametric while being explainable. The experiment results show that the proposed pipeline outperforms conventional deep learning models. Our feature extraction requires no training or fine-tuning while preserving the relative shape and location of data points as revealed by our interpretability analysis.

The usage of electronic devices increases, and becomes predominant in most aspects of life. Surface Mount Technology (SMT) is the most common industrial method for manufacturing electric devices in which electrical components are mounted directly onto the surface of a Printed Circuit Board (PCB). Although the expansion of electronic devices affects our lives in a productive way, failures or defects in the manufacturing procedure of those devices might also be counterproductive and even harmful in some cases. It is therefore desired and sometimes crucial to ensure zero-defect quality in electronic devices and their production. While traditional Image Processing (IP) techniques are not sufficient to produce a complete solution, other promising methods like Deep Learning (DL) might also be challenging for PCB inspection, mainly because such methods require big adequate datasets which are missing, not available or not updated in the rapidly growing field of PCBs. Thus, PCB inspection is conventionally performed manually by human experts. Unsupervised Learning (UL) methods may potentially be suitable for PCB inspection, having learning capabilities on the one hand, while not relying on large datasets on the other. In this paper, we introduce ChangeChip, an automated and integrated change detection system for defect detection in PCBs, from soldering defects to missing or misaligned electronic elements, based on Computer Vision (CV) and UL. We achieve good quality defect detection by applying an unsupervised change detection between images of a golden PCB (reference) and the inspected PCB under various setting. In this work, we also present CD-PCB, a synthesized labeled dataset of 20 pairs of PCB images for evaluation of defect detection algorithms.

Facing with grave climate change and enormous energy demand, catalyzer gets more and more important due to its significant effect on reducing fossil fuels consumption. Hydrogen evolution reaction (HER) and oxygen evolution reaction (OER) by water splitting are feasible ways to produce clean sustainable energy. Here we systematically explored atomic structures and related STM images of Se defects in PtSe2. The equilibrium fractions of vacancies under variable conditions were detailly predicted. Besides, we found the vacancies are highly kinetic stable, without recovering or aggregation. The Se vacancies in PtSe2 can dramatically enhance the HER performance, comparing with, even better than Pt(111). Beyond, we firstly revealed that PtSe2 monolayer with Se vacancies is also a good OER catalyst. The excellent bipolar catalysis of Se vacancies were further confirmed by experimental measurements. We produced defective PtSe2 by direct selenization of Pt foil at 773 K using a CVD process. Then we observed the HER and OER performance of defective PtSe2 is much highly efficient than Pt foils by a series of measurements. Our work with compelling theoretical and experimental studies indicates PtSe2 with Se defects is an ideal bipolar candidate for HER and OER.

The emergence of new nanoscale technologies has imposed significant challenges to designing reliable electronic systems in radiation environments. A few types of radiation like Total Ionizing Dose (TID) effects often cause permanent damages on such nanoscale electronic devices, and current state-of-the-art technologies to tackle TID make use of expensive radiation-hardened devices. This paper focuses on a novel and different approach: using machine learning algorithms on consumer electronic level Field Programmable Gate Arrays (FPGAs) to tackle TID effects and monitor them to replace before they stop working. This condition has a research challenge to anticipate when the board results in a total failure due to TID effects. We observed internal measurements of the FPGA boards under gamma radiation and used three different anomaly detection machine learning (ML) algorithms to detect anomalies in the sensor measurements in a gamma-radiated environment. The statistical results show a highly significant relationship between the gamma radiation exposure levels and the board measurements. Moreover, our anomaly detection results have shown that a One-Class Support Vector Machine with Radial Basis Function Kernel has an average Recall score of 0.95. Also, all anomalies can be detected before the boards stop working.

Surface defects are a primary source of yield loss in manufacturing, yet existing anomaly detection methods often fail in real-world deployment due to limited and unrepresentative datasets. To overcome this, we introduce 3D-ADAM, a 3D Anomaly Detection in Additive Manufacturing dataset, that is the first large-scale, industry-relevant dataset for RGB+3D surface defect detection in additive manufacturing. 3D-ADAM comprises 14,120 high-resolution scans of 217 unique parts, captured with four industrial depth sensors, and includes 27,346 annotated defects across 12 categories along with 27,346 annotations of machine element features in 16 classes. 3D-ADAM is captured in a real industrial environment and as such reflects real production conditions, including variations in part placement, sensor positioning, lighting, and partial occlusion. Benchmarking state-of-the-art models demonstrates that 3D-ADAM presents substantial challenges beyond existing datasets. Validation through expert labelling surveys with industry partners further confirms its industrial relevance. By providing this benchmark, 3D-ADAM establishes a foundation for advancing robust 3D anomaly detection capable of meeting manufacturing demands.

Complementary metal-oxide semiconductor (CMOS) technology has radically reshaped the world by taking humanity to the digital age. Cramming more transistors into the same physical space has enabled an exponential increase in computational performance, a strategy that has been recently hampered by the increasing complexity and cost of miniaturization. To continue achieving significant gains in computing performance, new computing paradigms, such as quantum computing, must be developed. However, finding the optimal physical system to process quantum information, and scale it up to the large number of qubits necessary to build a general-purpose quantum computer, remains a significant challenge. Recent breakthroughs in nanodevice engineering have shown that qubits can now be manufactured in a similar fashion to silicon field-effect transistors, opening an opportunity to leverage the know-how of the CMOS industry to address the scaling challenge. In this article, we focus on the analysis of the scaling prospects of quantum computing systems based on CMOS technology.

The surface code family is a promising approach to implementing fault-tolerant quantum computations. Universal fault-tolerance requires error-corrected non-Clifford operations, in addition to Clifford gates, and for the former, it is imperative to experimentally demonstrate additional resources known as magic states. Another challenge is to efficiently embed surface codes into quantum hardware with connectivity constraints. This work simultaneously addresses both challenges by employing a qubit-efficient rotated heavy-hexagonal surface code for IBM quantum processors (ibm\_fez) and implementing the magic state injection protocol. Our work reports error thresholds for both logical bit- and phase-flip errors, of approx0.37% and approx0.31%, respectively, which are higher than the threshold values previously reported with traditional embedding. The post-selection-based preparation of logical magic states |H_Lrangle and |T_Lrangle achieve fidelities of 0.8806pm0.0002 and 0.8665pm0.0003, respectively, which are both above the magic state distillation threshold. Additionally, we report the minimum fidelity among injected arbitrary single logical qubit states as 0.8356pm0.0003. Our work demonstrates the potential for realising non-Clifford logical gates by producing high-fidelity logical magic states on IBM quantum devices.

Color centers in diamond, among them the negatively-charged germanium vacancy (GeV^-), are promising candidates for many applications of quantum optics such as a quantum network. For efficient implementation, the optical transitions need to be coupled to a single optical mode. Here, we demonstrate the transfer of a nanodiamond containing a single ingrown GeV- center with excellent optical properties to an open Fabry-P\'erot microcavity by nanomanipulation utilizing an atomic force microscope. Coupling of the GeV- defect to the cavity mode is achieved, while the optical resonator maintains a high finesse of F = 7,700 and a 48-fold spectral density enhancement is observed. This article demonstrates the integration of a GeV- defect with a Fabry-P\'erot microcavity under ambient conditions with the potential to extend the experiments to cryogenic temperatures towards an efficient spin-photon platform.

Recent advances in synthetic methods enable designing subunits that self-assemble into structures with well-defined sizes and architectures, but yields are frequently suppressed by the formation of off-target metastable structures. Increasing the complexity (number of distinct inter-subunit interaction types) can inhibit off-target structures, but leads to slower kinetics and higher synthesis costs. Here, we use icosahedral shells formed of programmable triangular subunits as a model system, and identify design principles that produce the highest target yield at the lowest complexity. We use a symmetry-based construction to create a range of design complexities, starting from the maximal symmetry Caspar-Klug assembly up to the fully addressable, zero-symmetry assembly. Kinetic Monte Carlo simulations reveal that the most prominent defects leading to off-target assemblies are a class of disclinations. We derive symmetry-based rules for identifying the optimal (lowest-complexity, highest-symmetry) design that inhibits these disclinations, leading to robust, high-fidelity assembly of targets with arbitrarily large sizes. Optimal complexity varies non-monotonically with target size, with `magic' sizes appearing for high-symmetry designs in which symmetry axes do not intersect vertices of the triangular net. The optimal designs at magic sizes require 12 times fewer inequivalent interaction-types than the (minimal symmetry) fully addressable construction.

Quality control is of vital importance during electronics production. As the methods of producing electronic circuits improve, there is an increasing chance of solder defects during assembling the printed circuit board (PCB). Many technologies have been incorporated for inspecting failed soldering, such as X-ray imaging, optical imaging, and thermal imaging. With some advanced algorithms, the new technologies are expected to control the production quality based on the digital images. However, current algorithms sometimes are not accurate enough to meet the quality control. Specialists are needed to do a follow-up checking. For automated X-ray inspection, joint of interest on the X-ray image is located by region of interest (ROI) and inspected by some algorithms. Some incorrect ROIs deteriorate the inspection algorithm. The high dimension of X-ray images and the varying sizes of image dimensions also challenge the inspection algorithms. On the other hand, recent advances on deep learning shed light on image-based tasks and are competitive to human levels. In this paper, deep learning is incorporated in X-ray imaging based quality control during PCB quality inspection. Two artificial intelligence (AI) based models are proposed and compared for joint defect detection. The noised ROI problem and the varying sizes of imaging dimension problem are addressed. The efficacy of the proposed methods are verified through experimenting on a real-world 3D X-ray dataset. By incorporating the proposed methods, specialist inspection workload is largely saved.

Defect inspection is paramount within the closed-loop manufacturing system. However, existing datasets for defect inspection often lack precision and semantic granularity required for practical applications. In this paper, we introduce the Defect Spectrum, a comprehensive benchmark that offers precise, semantic-abundant, and large-scale annotations for a wide range of industrial defects. Building on four key industrial benchmarks, our dataset refines existing annotations and introduces rich semantic details, distinguishing multiple defect types within a single image. Furthermore, we introduce Defect-Gen, a two-stage diffusion-based generator designed to create high-quality and diverse defective images, even when working with limited datasets. The synthetic images generated by Defect-Gen significantly enhance the efficacy of defect inspection models. Overall, The Defect Spectrum dataset demonstrates its potential in defect inspection research, offering a solid platform for testing and refining advanced models.

3D perception, especially point cloud classification, has achieved substantial progress. However, in real-world deployment, point cloud corruptions are inevitable due to the scene complexity, sensor inaccuracy, and processing imprecision. In this work, we aim to rigorously benchmark and analyze point cloud classification under corruptions. To conduct a systematic investigation, we first provide a taxonomy of common 3D corruptions and identify the atomic corruptions. Then, we perform a comprehensive evaluation on a wide range of representative point cloud models to understand their robustness and generalizability. Our benchmark results show that although point cloud classification performance improves over time, the state-of-the-art methods are on the verge of being less robust. Based on the obtained observations, we propose several effective techniques to enhance point cloud classifier robustness. We hope our comprehensive benchmark, in-depth analysis, and proposed techniques could spark future research in robust 3D perception.

In this paper, we describe a design of a mixed signal circuit for a binary neuron (a.k.a perceptron, threshold logic gate) and a methodology for automatically embedding such cells in ASICs. The binary neuron, referred to as an FTL (flash threshold logic) uses floating gate or flash transistors whose threshold voltages serve as a proxy for the weights of the neuron. Algorithms for mapping the weights to the flash transistor threshold voltages are presented. The threshold voltages are determined to maximize both the robustness of the cell and its speed. The performance, power, and area of a single FTL cell are shown to be significantly smaller (79.4%), consume less power (61.6%), and operate faster (40.3%) compared to conventional CMOS logic equivalents. Also included are the architecture and the algorithms to program the flash devices of an FTL. The FTL cells are implemented as standard cells, and are designed to allow commercial synthesis and P&R tools to automatically use them in synthesis of ASICs. Substantial reductions in area and power without sacrificing performance are demonstrated on several ASIC benchmarks by the automatic embedding of FTL cells. The paper also demonstrates how FTL cells can be used for fixing timing errors after fabrication.

The long term scaling prospects for solid-state quantum computing architectures relies heavily on the ability to simply and reliably measure and control the coherent electron interaction strength, known as the tunnel coupling, t_c. Here, we describe a method to extract the t_c between two quantum dots (QDs) utilising their different tunnel rates to a reservoir. We demonstrate the technique on a few donor triple QD tunnel coupled to a nearby single-electron transistor (SET) in silicon. The device was patterned using scanning tunneling microscopy-hydrogen lithography allowing for a direct measurement of the tunnel coupling for a given inter-dot distance. We extract {t}_{{c}}=5.5pm 1.8;{GHz} and {t}_{{c}}=2.2pm 1.3;{GHz} between each of the nearest-neighbour QDs which are separated by 14.5 nm and 14.0 nm, respectively. The technique allows for an accurate measurement of t_c for nanoscale devices even when it is smaller than the electron temperature and is an ideal characterisation tool for multi-dot systems with a charge sensor.

Lack of rigorous reproducibility and validation are major hurdles for scientific development across many fields. Materials science in particular encompasses a variety of experimental and theoretical approaches that require careful benchmarking. Leaderboard efforts have been developed previously to mitigate these issues. However, a comprehensive comparison and benchmarking on an integrated platform with multiple data modalities with both perfect and defect materials data is still lacking. This work introduces JARVIS-Leaderboard, an open-source and community-driven platform that facilitates benchmarking and enhances reproducibility. The platform allows users to set up benchmarks with custom tasks and enables contributions in the form of dataset, code, and meta-data submissions. We cover the following materials design categories: Artificial Intelligence (AI), Electronic Structure (ES), Force-fields (FF), Quantum Computation (QC) and Experiments (EXP). For AI, we cover several types of input data, including atomic structures, atomistic images, spectra, and text. For ES, we consider multiple ES approaches, software packages, pseudopotentials, materials, and properties, comparing results to experiment. For FF, we compare multiple approaches for material property predictions. For QC, we benchmark Hamiltonian simulations using various quantum algorithms and circuits. Finally, for experiments, we use the inter-laboratory approach to establish benchmarks. There are 1281 contributions to 274 benchmarks using 152 methods with more than 8 million data-points, and the leaderboard is continuously expanding. The JARVIS-Leaderboard is available at the website: https://pages.nist.gov/jarvis_leaderboard

Standing as one of the most significant barriers to reaching quantum advantage, state-preparation fidelities on noisy intermediate-scale quantum processors suffer from quantum-gate errors, which accumulate over time. A potential remedy is pulse-based state preparation. We numerically investigate the minimal evolution times (METs) attainable by optimizing (microwave and exchange) pulses on silicon hardware. We investigate two state preparation tasks. First, we consider the preparation of molecular ground states and find the METs for H_2, HeH^+, and LiH to be 2.4 ns, 4.4 ns, and 27.2 ns, respectively. Second, we consider transitions between arbitrary states and find the METs for transitions between arbitrary four-qubit states to be below 50 ns. For comparison, connecting arbitrary two-qubit states via one- and two-qubit gates on the same silicon processor requires approximately 200 ns. This comparison indicates that pulse-based state preparation is likely to utilize the coherence times of silicon hardware more efficiently than gate-based state preparation. Finally, we quantify the effect of silicon device parameters on the MET. We show that increasing the maximal exchange amplitude from 10 MHz to 1 GHz accelerates the METs, e.g., for H_2 from 84.3 ns to 2.4 ns. This demonstrates the importance of fast exchange. We also show that increasing the maximal amplitude of the microwave drive from 884 kHz to 56.6 MHz shortens state transitions, e.g., for two-qubit states from 1000 ns to 25 ns. Our results bound both the state-preparation times for general quantum algorithms and the execution times of variational quantum algorithms with silicon spin qubits.

Automated detection of defects in Printed Circuit Board (PCB) manufacturing using Solder Paste Inspection (SPI) and Automated Optical Inspection (AOI) machines can help improve operational efficiency and significantly reduce the need for manual intervention. In this paper, using SPI-extracted features of 6 million pins, we demonstrate a data-centric approach to train Machine Learning (ML) models to detect PCB defects at three stages of PCB manufacturing. The 6 million PCB pins correspond to 2 million components that belong to 15,387 PCBs. Using a base extreme gradient boosting (XGBoost) ML model, we iterate on the data pre-processing step to improve detection performance. Combining pin-level SPI features using component and PCB IDs, we developed training instances also at the component and PCB level. This allows the ML model to capture any inter-pin, inter-component, or spatial effects that may not be apparent at the pin level. Models are trained at the pin, component, and PCB levels, and the detection results from the different models are combined to identify defective components.

3D anomaly detection plays a crucial role in monitoring parts for localized inherent defects in precision manufacturing. Embedding-based and reconstruction-based approaches are among the most popular and successful methods. However, there are two major challenges to the practical application of the current approaches: 1) the embedded models suffer the prohibitive computational and storage due to the memory bank structure; 2) the reconstructive models based on the MAE mechanism fail to detect anomalies in the unmasked regions. In this paper, we propose R3D-AD, reconstructing anomalous point clouds by diffusion model for precise 3D anomaly detection. Our approach capitalizes on the data distribution conversion of the diffusion process to entirely obscure the input's anomalous geometry. It step-wisely learns a strict point-level displacement behavior, which methodically corrects the aberrant points. To increase the generalization of the model, we further present a novel 3D anomaly simulation strategy named Patch-Gen to generate realistic and diverse defect shapes, which narrows the domain gap between training and testing. Our R3D-AD ensures a uniform spatial transformation, which allows straightforwardly generating anomaly results by distance comparison. Extensive experiments show that our R3D-AD outperforms previous state-of-the-art methods, achieving 73.4% Image-level AUROC on the Real3D-AD dataset and 74.9% Image-level AUROC on the Anomaly-ShapeNet dataset with an exceptional efficiency.

In industrial anomaly detection (IAD), accurately identifying defects amidst diverse anomalies and under varying imaging conditions remains a significant challenge. Traditional approaches often struggle with high false-positive rates, frequently misclassifying normal shadows and surface deformations as defects, an issue that becomes particularly pronounced in products with complex and intricate surface features. To address these challenges, we introduce PA-CLIP, a zero-shot anomaly detection method that reduces background noise and enhances defect detection through a pseudo-anomaly-based framework. The proposed method integrates a multiscale feature aggregation strategy for capturing detailed global and local information, two memory banks for distinguishing background information, including normal patterns and pseudo-anomalies, from true anomaly features, and a decision-making module designed to minimize false positives caused by environmental variations while maintaining high defect sensitivity. Demonstrated on the MVTec AD and VisA datasets, PA-CLIP outperforms existing zero-shot methods, providing a robust solution for industrial defect detection.

Perovskite solar cells (PSCs) have rapidly emerged as a leading contender in next-generation photovoltaic technologies, owing to their exceptional power conversion efficiencies and advantageous material properties. Despite these advances, challenges such as long-term stability, environmental sustainability, and scalable manufacturing continue to hinder their commercialization. Precursor additive engineering has shown promise in addressing these issues by enhancing both the performance and durability of PSCs. However, the explosive growth of scientific literature and the complex interplay of materials, processes, and device architectures make it increasingly difficult for researchers to efficiently access, organize, and utilize domain knowledge in this rapidly evolving field. To address this gap, we introduce Perovskite-R1, a specialized large language model (LLM) with advanced reasoning capabilities tailored for the discovery and design of PSC precursor additives. By systematically mining and curating 1,232 high-quality scientific publications and integrating a comprehensive library of 33,269 candidate materials, we constructed a domain-specific instruction-tuning dataset using automated question-answer generation and chain-of-thought reasoning. Fine-tuning the QwQ-32B model on this dataset resulted in Perovskite-R1, which can intelligently synthesize literature insights and generate innovative and practical solutions for defect passivation and the selection of precursor additives. Experimental validation of several model-proposed strategies confirms their effectiveness in improving material stability and performance. Our work demonstrates the potential of domain-adapted LLMs in accelerating materials discovery and provides a closed-loop framework for intelligent, data-driven advancements in perovskite photovoltaic research.

The most widely used method for obtaining high-quality two-dimensional materials is through mechanical exfoliation of bulk crystals. Manual identification of suitable flakes from the resulting random distribution of crystal thicknesses and sizes on a substrate is a time-consuming, tedious task. Here, we present a platform for fully automated scanning, detection, and classification of two-dimensional materials, the source code of which we make openly available. Our platform is designed to be accurate, reliable, fast, and versatile in integrating new materials, making it suitable for everyday laboratory work. The implementation allows fully automated scanning and analysis of wafers with an average inference time of 100 ms for images of 2.3 Mpixels. The developed detection algorithm is based on a combination of the flakes' optical contrast toward the substrate and their geometric shape. We demonstrate that it is able to detect the majority of exfoliated flakes of various materials, with an average recall (AR50) between 67% and 89%. We also show that the algorithm can be trained with as few as five flakes of a given material, which we demonstrate for the examples of few-layer graphene, WSe_2, MoSe_2, CrI_3, 1T-TaS_2 and hexagonal BN. Our platform has been tested over a two-year period, during which more than 10^6 images of multiple different materials were acquired by over 30 individual researchers.

Point management is a critical component in optimizing 3D Gaussian Splatting (3DGS) models, as the point initiation (e.g., via structure from motion) is distributionally inappropriate. Typically, the Adaptive Density Control (ADC) algorithm is applied, leveraging view-averaged gradient magnitude thresholding for point densification, opacity thresholding for pruning, and regular all-points opacity reset. However, we reveal that this strategy is limited in tackling intricate/special image regions (e.g., transparent) as it is unable to identify all the 3D zones that require point densification, and lacking an appropriate mechanism to handle the ill-conditioned points with negative impacts (occlusion due to false high opacity). To address these limitations, we propose a Localized Point Management (LPM) strategy, capable of identifying those error-contributing zones in the highest demand for both point addition and geometry calibration. Zone identification is achieved by leveraging the underlying multiview geometry constraints, with the guidance of image rendering errors. We apply point densification in the identified zone, whilst resetting the opacity of those points residing in front of these regions so that a new opportunity is created to correct ill-conditioned points. Serving as a versatile plugin, LPM can be seamlessly integrated into existing 3D Gaussian Splatting models. Experimental evaluation across both static 3D and dynamic 4D scenes validate the efficacy of our LPM strategy in boosting a variety of existing 3DGS models both quantitatively and qualitatively. Notably, LPM improves both vanilla 3DGS and SpaceTimeGS to achieve state-of-the-art rendering quality while retaining real-time speeds, outperforming on challenging datasets such as Tanks & Temples and the Neural 3D Video Dataset.

Established sampling protocols for 3D point cloud learning, such as Farthest Point Sampling (FPS) and Fixed Sample Size (FSS), have long been relied upon. However, real-world data often suffer from corruptions, such as sensor noise, which violates the benign data assumption in current protocols. As a result, these protocols are highly vulnerable to noise, posing significant safety risks in critical applications like autonomous driving. To address these issues, we propose an enhanced point cloud sampling protocol, PointSP, designed to improve robustness against point cloud corruptions. PointSP incorporates key point reweighting to mitigate outlier sensitivity and ensure the selection of representative points. It also introduces a local-global balanced downsampling strategy, which allows for scalable and adaptive sampling while maintaining geometric consistency. Additionally, a lightweight tangent plane interpolation method is used to preserve local geometry while enhancing the density of the point cloud. Unlike learning-based approaches that require additional model training, PointSP is architecture-agnostic, requiring no extra learning or modification to the network. This enables seamless integration into existing pipelines. Extensive experiments on synthetic and real-world corrupted datasets show that PointSP significantly improves the robustness and accuracy of point cloud classification, outperforming state-of-the-art methods across multiple benchmarks.

We introduce a Three-Dimensional Convolutional Variational Autoencoder (3D-CVAE) for automated anomaly detection in Electron Energy Loss Spectroscopy Spectrum Imaging (EELS-SI) data. Our approach leverages the full three-dimensional structure of EELS-SI data to detect subtle spectral anomalies while preserving both spatial and spectral correlations across the datacube. By employing negative log-likelihood loss and training on bulk spectra, the model learns to reconstruct bulk features characteristic of the defect-free material. In exploring methods for anomaly detection, we evaluated both our 3D-CVAE approach and Principal Component Analysis (PCA), testing their performance using Fe L-edge peak shifts designed to simulate material defects. Our results show that 3D-CVAE achieves superior anomaly detection and maintains consistent performance across various shift magnitudes. The method demonstrates clear bimodal separation between normal and anomalous spectra, enabling reliable classification. Further analysis verifies that lower dimensional representations are robust to anomalies in the data. While performance advantages over PCA diminish with decreasing anomaly concentration, our method maintains high reconstruction quality even in challenging, noise-dominated spectral regions. This approach provides a robust framework for unsupervised automated detection of spectral anomalies in EELS-SI data, particularly valuable for analyzing complex material systems.

Molecular ferroelectric materials have attracted widespread attention due to their abundant chemical diversity, structural tunability, low synthesis temperature, and high flexibility. Meanwhile, the integration of molecular ferroelectric materials and Si is still challenging, while the fundamental understanding of the ferroelectric switching process is still lacking. Herein, we have successfully synthesized the imidazole perchlorate (ImClO4) single crystals and a series of high-quality highly-oriented thin films on a Si substrate. A high inverse piezoelectric coefficient (55.7 pm/V) is demonstrated for the thin films. Two types of domain bands can be observed (in the size of a few microns): type-I band tilts ~60{\deg} with respect to the horizontal axis, while the type-II band is perpendicular to the horizontal axis. Most of the domain walls (DWs) are 180{\deg} DWs for the two bands, while some 109{\deg} DWs can also be observed. Interestingly, the DWs in type-I band are curved, charged domain walls; while the 180{\deg} DWs in type-II band are straight, noncharged domain walls. After applying +20 V for 5 s through a PFM tip, the 180{\deg} DWs in type-I band shrink first, then disconnect from the band boundary, forming a needle-like domain with a size of ~100 nm. The needle-like domain will extend toward the band boundary after an inverse bias is applied (-20 V), and expand along the band boundary after touching the boundary. Whereas for the type-II domain band, the 180{\deg} DWs are more mobile than the 109{\deg} domain walls, which displaces ~500 nm after applying +20 V. While such displacement is much shorter after the application of a negative bias for the same duration, starting from the positively poled sample. We hope to spur further interest in the on-chip design of the molecular ferroelectrics based electronic devices.

Detecting surface anomalies of industrial materials poses a significant challenge within a myriad of industrial manufacturing processes. In recent times, various methodologies have emerged, capitalizing on the advantages of employing a network pre-trained on natural images for the extraction of representative features. Subsequently, these features are subjected to processing through a diverse range of techniques including memory banks, normalizing flow, and knowledge distillation, which have exhibited exceptional accuracy. This paper revisits approaches based on pre-trained features by introducing a novel method centered on target-specific embedding. To capture the most representative features of the texture under consideration, we employ a variant of a contrastive training procedure that incorporates both artificially generated defective samples and anomaly-free samples during training. Exploiting the intrinsic properties of surfaces, we derived a meaningful representation from the defect-free samples during training, facilitating a straightforward yet effective calculation of anomaly scores. The experiments conducted on the MVTEC AD and TILDA datasets demonstrate the competitiveness of our approach compared to state-of-the-art methods.

High-performance DUV spectroscopy drives advancements in biomedical research, clinical diagnosis, and material science. Existing DUV resonant nanostructures face instability and photoluminescent noise challenges. We propose robust Si metasurfaces leveraging polaritonic resonances, a unique property driven by interband transitions, for enhanced nanophotonic sensing. Our polaritonic Kerker-type void metasurface enables double-resonance Raman scattering to analyze 2D semiconductors, improves biomolecule autofluorescence, and offers superior stability. This scalable platform unlocks versatile applications in interdisciplinary DUV spectroscopy and emerging nanomaterials research.

Semiconductor lasers have been rapidly evolving to meet the demands of next-generation optical networks. This imposes much more stringent requirements on the laser reliability, which are dominated by degradation mechanisms (e.g., sudden degradation) limiting the semiconductor laser lifetime. Physics-based approaches are often used to characterize the degradation behavior analytically, yet explicit domain knowledge and accurate mathematical models are required. Building such models can be very challenging due to a lack of a full understanding of the complex physical processes inducing the degradation under various operating conditions. To overcome the aforementioned limitations, we propose a new data-driven approach, extracting useful insights from the operational monitored data to predict the degradation trend without requiring any specific knowledge or using any physical model. The proposed approach is based on an unsupervised technique, a conditional variational autoencoder, and validated using vertical-cavity surface-emitting laser (VCSEL) and tunable edge emitting laser reliability data. The experimental results confirm that our model (i) achieves a good degradation prediction and generalization performance by yielding an F1 score of 95.3%, (ii) outperforms several baseline ML based anomaly detection techniques, and (iii) helps to shorten the aging tests by early predicting the failed devices before the end of the test and thereby saving costs

Anomaly detection is a crucial process in industrial manufacturing and has made significant advancements recently. However, there is a large variance between the data used in the development and the data collected by the production environment. Therefore, we present the Texture-AD benchmark based on representative texture-based anomaly detection to evaluate the effectiveness of unsupervised anomaly detection algorithms in real-world applications. This dataset includes images of 15 different cloth, 14 semiconductor wafers and 10 metal plates acquired under different optical schemes. In addition, it includes more than 10 different types of defects produced during real manufacturing processes, such as scratches, wrinkles, color variations and point defects, which are often more difficult to detect than existing datasets. All anomalous areas are provided with pixel-level annotations to facilitate comprehensive evaluation using anomaly detection models. Specifically, to adapt to diverse products in automated pipelines, we present a new evaluation method and results of baseline algorithms. The experimental results show that Texture-AD is a difficult challenge for state-of-the-art algorithms. To our knowledge, Texture-AD is the first dataset to be devoted to evaluating industrial defect detection algorithms in the real world. The dataset is available at https://XXX.

The advancement of polymer informatics has been significantly propelled by the integration of machine learning (ML) techniques, enabling the rapid prediction of polymer properties and expediting the discovery of high-performance polymeric materials. However, the field lacks a standardized workflow that encompasses prediction accuracy, uncertainty quantification, ML interpretability, and polymer synthesizability. In this study, we introduce POINT^{2} (POlymer INformatics Training and Testing), a comprehensive benchmark database and protocol designed to address these critical challenges. Leveraging the existing labeled datasets and the unlabeled PI1M dataset, a collection of approximately one million virtual polymers generated via a recurrent neural network trained on the realistic polymers, we develop an ensemble of ML models, including Quantile Random Forests, Multilayer Perceptrons with dropout, Graph Neural Networks, and pretrained large language models. These models are coupled with diverse polymer representations such as Morgan, MACCS, RDKit, Topological, Atom Pair fingerprints, and graph-based descriptors to achieve property predictions, uncertainty estimations, model interpretability, and template-based polymerization synthesizability across a spectrum of properties, including gas permeability, thermal conductivity, glass transition temperature, melting temperature, fractional free volume, and density. The POINT^{2} database can serve as a valuable resource for the polymer informatics community for polymer discovery and optimization.

We introduce fusion-based quantum computing (FBQC) - a model of universal quantum computation in which entangling measurements, called fusions, are performed on the qubits of small constant-sized entangled resource states. We introduce a stabilizer formalism for analyzing fault tolerance and computation in these schemes. This framework naturally captures the error structure that arises in certain physical systems for quantum computing, such as photonics. FBQC can offer significant architectural simplifications, enabling hardware made up of many identical modules, requiring an extremely low depth of operations on each physical qubit and reducing classical processing requirements. We present two pedagogical examples of fault-tolerant schemes constructed in this framework and numerically evaluate their threshold under a hardware agnostic fusion error model including both erasure and Pauli error. We also study an error model of linear optical quantum computing with probabilistic fusion and photon loss. In FBQC the non-determinism of fusion is directly dealt with by the quantum error correction protocol, along with other errors. We find that tailoring the fault-tolerance framework to the physical system allows the scheme to have a higher threshold than schemes reported in literature. We present a ballistic scheme which can tolerate a 10.4% probability of suffering photon loss in each fusion.

Matbench Discovery simulates the deployment of machine learning (ML) energy models in a high-throughput search for stable inorganic crystals. We address the disconnect between (i) thermodynamic stability and formation energy and (ii) in-domain vs out-of-distribution performance. Alongside this paper, we publish a Python package to aid with future model submissions and a growing online leaderboard with further insights into trade-offs between various performance metrics. To answer the question which ML methodology performs best at materials discovery, our initial release explores a variety of models including random forests, graph neural networks (GNN), one-shot predictors, iterative Bayesian optimizers and universal interatomic potentials (UIP). Ranked best-to-worst by their test set F1 score on thermodynamic stability prediction, we find CHGNet > M3GNet > MACE > ALIGNN > MEGNet > CGCNN > CGCNN+P > Wrenformer > BOWSR > Voronoi tessellation fingerprints with random forest. The top 3 models are UIPs, the winning methodology for ML-guided materials discovery, achieving F1 scores of ~0.6 for crystal stability classification and discovery acceleration factors (DAF) of up to 5x on the first 10k most stable predictions compared to dummy selection from our test set. We also highlight a sharp disconnect between commonly used global regression metrics and more task-relevant classification metrics. Accurate regressors are susceptible to unexpectedly high false-positive rates if those accurate predictions lie close to the decision boundary at 0 eV/atom above the convex hull where most materials are. Our results highlight the need to focus on classification metrics that actually correlate with improved stability hit rate.

We present a method to convert certain single photon sources into devices capable of emitting large strings of photonic cluster state in a controlled and pulsed "on demand" manner. Such sources would greatly reduce the resources required to achieve linear optical quantum computation. Standard spin errors, such as dephasing, are shown to affect only 1 or 2 of the emitted photons at a time. This allows for the use of standard fault tolerance techniques, and shows that the photonic machine gun can be fired for arbitrarily long times. Using realistic parameters for current quantum dot sources, we conclude high entangled-photon emission rates are achievable, with Pauli-error rates per photon of less than 0.2%. For quantum dot sources the method has the added advantage of alleviating the problematic issues of obtaining identical photons from independent, non-identical quantum dots, and of exciton dephasing.

Industry 4.0 has revolutionized manufacturing by driving digitalization and shifting the paradigm toward additive manufacturing (AM). Fused Deposition Modeling (FDM), a key AM technology, enables the creation of highly customized, cost-effective products with minimal material waste through layer-by-layer extrusion, posing a significant challenge to traditional subtractive methods. However, the susceptibility of material extrusion techniques to errors often requires expert intervention to detect and mitigate defects that can severely compromise product quality. While automated error detection and machine learning models exist, their generalizability across diverse 3D printer setups, firmware, and sensors is limited, and deep learning methods require extensive labeled datasets, hindering scalability and adaptability. To address these challenges, we present a process monitoring and control framework that leverages pre-trained Large Language Models (LLMs) alongside 3D printers to detect and address printing defects. The LLM evaluates print quality by analyzing images captured after each layer or print segment, identifying failure modes and querying the printer for relevant parameters. It then generates and executes a corrective action plan. We validated the effectiveness of the proposed framework in identifying defects by comparing it against a control group of engineers with diverse AM expertise. Our evaluation demonstrated that LLM-based agents not only accurately identify common 3D printing errors, such as inconsistent extrusion, stringing, warping, and layer adhesion, but also effectively determine the parameters causing these failures and autonomously correct them without any need for human intervention.

Surface defect detection is a critical task across numerous industries, aimed at efficiently identifying and localising imperfections or irregularities on manufactured components. While numerous methods have been proposed, many fail to meet industrial demands for high performance, efficiency, and adaptability. Existing approaches are often constrained to specific supervision scenarios and struggle to adapt to the diverse data annotations encountered in real-world manufacturing processes, such as unsupervised, weakly supervised, mixed supervision, and fully supervised settings. To address these challenges, we propose SuperSimpleNet, a highly efficient and adaptable discriminative model built on the foundation of SimpleNet. SuperSimpleNet incorporates a novel synthetic anomaly generation process, an enhanced classification head, and an improved learning procedure, enabling efficient training in all four supervision scenarios, making it the first model capable of fully leveraging all available data annotations. SuperSimpleNet sets a new standard for performance across all scenarios, as demonstrated by its results on four challenging benchmark datasets. Beyond accuracy, it is very fast, achieving an inference time below 10 ms. With its ability to unify diverse supervision paradigms while maintaining outstanding speed and reliability, SuperSimpleNet represents a promising step forward in addressing real-world manufacturing challenges and bridging the gap between academic research and industrial applications. Code: https://github.com/blaz-r/SuperSimpleNet

The aim of surface defect detection is to identify and localise abnormal regions on the surfaces of captured objects, a task that's increasingly demanded across various industries. Current approaches frequently fail to fulfil the extensive demands of these industries, which encompass high performance, consistency, and fast operation, along with the capacity to leverage the entirety of the available training data. Addressing these gaps, we introduce SuperSimpleNet, an innovative discriminative model that evolved from SimpleNet. This advanced model significantly enhances its predecessor's training consistency, inference time, as well as detection performance. SuperSimpleNet operates in an unsupervised manner using only normal training images but also benefits from labelled abnormal training images when they are available. SuperSimpleNet achieves state-of-the-art results in both the supervised and the unsupervised settings, as demonstrated by experiments across four challenging benchmark datasets. Code: https://github.com/blaz-r/SuperSimpleNet .

Tunneling spectroscopy is widely used to examine the subgap spectra in semiconductor-superconductor nanostructures when searching for Majorana zero modes (MZMs). Typically, semiconductor sections controlled by local gates at the ends of hybrids serve as tunnel barriers. Besides detecting states only at the hybrid ends, such gate-defined tunnel probes can cause the formation of non-topological subgap states that mimic MZMs. Here, we develop an alternative type of tunnel probes to overcome these limitations. After the growth of an InSb-Al hybrid nanowire, a precisely controlled in-situ oxidation of the Al shell is performed to yield a nm-thick Al oxide layer. In such thin isolating layer, tunnel probes can be arbitrarily defined at any position along the hybrid nanowire by shadow-wall angle-deposition of metallic leads. This allows us to make multiple tunnel probes along single nanowire hybrids and to successfully identify Andreev bound states (ABSs) of various spatial extension residing along the hybrids.